GT60N321 PDF

Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. TOSHIBA GT60N(Q) | Transistor: IGBT; V; 60A; W; TO3P – This product is available in Transfer Multisort Elektronik. Check out our wide range of . GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th.

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Free shipping 10pieces/lot GT60N321 IGBT 1000V 60A 170W TO3P IC Best quality

The Gtt60n321 combines the simple gate-drive characteristics of the MOSFETs with the high-current and low—saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. Our website uses cookies and similar technologies to provide you with a better service while searching or placing an order, for analytical purposes and to personalise our advertising to you.

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GT60N IGBT. Datasheet pdf – Equivalent

All Stars 0 All Stars 0. Reviews from Russian Site. The product detailed below complies with the specifications published by RS Components.

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COO Country of Origin: Bundle Deals Related Items. The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering.

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Toshiba GT60N321(Q) IGBT, 60 A 1000 V, 3-Pin TO-3PLH

The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering The restricted substances and maximum allowed concentrations in the homogenous material are, by weight: Sort by Default Default.

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